• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 3
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
LND250K1-G MOSFET N-CH 500V 0.013A SOT23-3 Microchip Technology SOT-23 (TO-236AB) Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 360mW (Ta) 500V 13mA (Tj) Depletion Mode 1000Ohm @ 500µA, 0V 0V 10pF @ 25V ±20V
TN5335K1-G MOSFET N-CH 350V 0.11A SOT23-3 Microchip Technology SOT-23 (TO-236AB) Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 360mW (Ta) 350V 110mA (Tj) 15Ohm @ 200mA, 10V 3V, 10V 2V @ 1mA 110pF @ 25V ±20V
2N7002-G MOSFET N-CH 60V 0.115A SOT23-3 Microchip Technology SOT-23 (TO-236AB) Surface Mount TO-236-3, SC-59, SOT-23-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 360mW (Ta) 60V 115mA (Tj) 7.5Ohm @ 500mA, 10V 5V, 10V 2.5V @ 250µA 50pF @ 25V ±30V
  • 10
  • 15
  • 50
  • 100