Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Microchip Technology D3
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: D3
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
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- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: D-3 Module
- Supplier Device Package: D3
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V
- Power - Max: 625W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: D3
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
- Power - Max: 2.97kW (Tc)
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: Microchip Technology
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: D-3 Module
- Supplier Device Package: D3
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 200A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
- Power - Max: 1100W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100