• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 5
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
MSCSM120AM042CD3AG PM-MOSFET-SIC-SBD~-D3 Microchip Technology D3 2.031kW (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 2 N Channel (Phase Leg) 1200V (1.2kV) 495A (Tc) Silicon Carbide (SiC) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V
APTMC120AM16CD3AG MOSFET 2N-CH 1200V 131A D3 Microchip Technology D3 625W Chassis Mount D-3 Module -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 1200V (1.2kV) 131A (Tc) Silicon Carbide (SiC) 20mOhm @ 100A, 20V 2.2V @ 5mA (Typ) 246nC @ 20V 4750pF @ 1000V
MSCSM120AM027CD3AG PM-MOSFET-SIC-SBD~-D3 Microchip Technology D3 2.97kW (Tc) Chassis Mount Module -40°C ~ 175°C (TJ) 2 N Channel (Phase Leg) 1200V (1.2kV) 733A (Tc) Silicon Carbide (SiC) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @ 1000V
MSCSM70AM025CD3AG PM-MOSFET-SIC-SBD~-D3 Microchip Technology D3 Chassis Mount Module 700V 538A (Tc)
APTMC120AM08CD3AG MOSFET 2N-CH 1200V 250A D3 Microchip Technology D3 1100W Chassis Mount D-3 Module -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A (Tc) Silicon Carbide (SiC) 10mOhm @ 200A, 20V 2.2V @ 10mA (Typ) 490nC @ 20V 9500pF @ 1000V
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