-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Input Capacitance (Ciss) (Max) @ Vds
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TC6321T-V/9U | MOSFET N/P-CH 200V 2A 8VDFN | Microchip Technology | 8-VDFN (6x5) | Surface Mount | 8-VDFN Exposed Pad | -55°C ~ 175°C | N and P-Channel | 200V | 2A (Ta) | Logic Level Gate | 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | 110pF @ 25V, 200pF @ 25V |
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- 15
- 50
- 100