-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCMNP517-TP | MOSFET N/P-CH 12V 6A/4.1A | Micro Commercial Co | DFN2020-6U | Surface Mount | 6-VDFN Exposed Pad | -55°C ~ 150°C (TJ) | N and P-Channel | 12V | 6A, 4.1A | Logic Level Gate, 1.8V Drive | 24mOhm @ 6A, 10V | 1V @ 250µA | 12nC @ 10V | 630pF @ 10V |
MCMP06-TP | MOSFET P+SKY DFN2020-6U | Micro Commercial Co | DFN2020-6U | Surface Mount | 6-VDFN Exposed Pad | 150°C (TJ) | P-Channel | 2A (Ta) | Schottky Diode (Isolated) | 110mOhm @ 2.8A, 4.5V | 1V @ 250µA |
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