• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
LSIC1MO120E0160 SIC MOSFET 1200V 22A TO247-3 Littelfuse Inc. TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 125W (Tc) 1200V 22A (Tc) 200mOhm @ 10A, 20V 20V 4V @ 5mA 57nC @ 20V 870pF @ 800V +22V, -6V
LSIC1MO120E0120 SIC MOSFET 1200V 27A TO247-3 Littelfuse Inc. TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 139W (Tc) 1200V 27A (Tc) 150mOhm @ 14A, 20V 20V 4V @ 7mA 80nC @ 20V 1125pF @ 800V +22V, -6V
LSIC1MO120E0080 MOSFET SIC 1200V 39A TO247-3 Littelfuse Inc. TO-247-3 Through Hole TO-247-3 SiCFET (Silicon Carbide) -55°C ~ 150°C N-Channel 179W (Tc) 1200V 39A (Tc) 100mOhm @ 20A, 20V 20V 4V @ 10mA 95nC @ 20V 1825pF @ 800V +22V, -6V
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