Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS TO-247-3

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • IXFH24N60X
    MOSFET N-CH 600V 24A TO-247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFH14N85X
    MOSFET N-CH 850V 14A TO247AD
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTH16N50D2
    MOSFET N-CH 500V 16A TO-247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V
    • Gate Charge (Qg) (Max) @ Vgs: 199nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 695W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 0V
    • Vgs (Max): ±20V
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  • IXTH12N65X2
    MOSFET N-CH 650V 12A TO-247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 180W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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