• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IXFH24N60X MOSFET N-CH 600V 24A TO-247 IXYS TO-247-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 400W (Tc) 600V 24A (Tc) 175mOhm @ 12A, 10V 10V 4.5V @ 2.5mA 47nC @ 10V 1910pF @ 25V ±30V HiPerFET™
IXFH14N85X MOSFET N-CH 850V 14A TO247AD IXYS TO-247-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 460W (Tc) 850V 14A (Tc) 550mOhm @ 500mA, 10V 10V 5.5V @ 1mA 30nC @ 10V 1043pF @ 25V ±30V HiPerFET™
IXTH16N50D2 MOSFET N-CH 500V 16A TO-247 IXYS TO-247-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 695W (Tc) 500V 16A (Tc) Depletion Mode 240mOhm @ 8A, 0V 0V 199nC @ 5V 5250pF @ 25V ±20V
IXTH12N65X2 MOSFET N-CH 650V 12A TO-247 IXYS TO-247-3 Through Hole TO-247-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 180W (Tc) 650V 12A (Tc) 300mOhm @ 6A, 10V 10V 5V @ 250µA 17nC @ 10V 1100pF @ 25V ±30V
  • 10
  • 15
  • 50
  • 100