• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
IXTP8N70X2 MOSFET N-CHANNEL 700V 8A TO220 IXYS TO-220-3 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 150W (Tc) 700V 8A (Tc) 500mOhm @ 500mA, 10V 10V 5V @ 250µA 12nC @ 10V 800pF @ 10V ±30V
IXTP32N65XM MOSFET N-CH 650V 14A TO-220 IXYS TO-220-3 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 78W (Tc) 650V 14A (Tc) 135mOhm @ 16A, 10V 10V 5.5V @ 250µA 54nC @ 10V 2206pF @ 25V ±30V
IXTP32N65X MOSFET N-CH 650V 32A TO-220 IXYS TO-220-3 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 500W (Tc) 650V 32A (Tc) 135mOhm @ 16A, 10V 10V 5.5V @ 250µA 54nC @ 10V 2205pF @ 25V ±30V
  • 10
  • 15
  • 50
  • 100