-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFM35N30 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 300V | 35A (Tc) | 100mOhm @ 17.5A, 10V | 10V | 4V @ 4mA | 200nC @ 10V | 4800pF @ 25V | ±20V | HiPerFET™ |
| IXFM67N10 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 100V | 67A (Tc) | 25mOhm @ 33.5A, 10V | 10V | 4V @ 4mA | 260nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ |
| IXFM42N20 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 200V | 42A (Tc) | 60mOhm @ 21A, 10V | 10V | 4V @ 4mA | 220nC @ 10V | 4400pF @ 25V | ±20V | HiPerFET™ |
| IXTM40N30 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 300V | 40A (Tc) | 88mOhm @ 20A, 10V | 10V | 4V @ 250µA | 220nC @ 10V | 4600pF @ 25V | ±20V | GigaMOS™ |
| IXTM67N10 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 100V | 67A (Tc) | 25mOhm @ 33.5A, 10V | 10V | 4V @ 4mA | 260nC @ 10V | 4500pF @ 25V | ±20V | GigaMOS™ |
| IXFM15N60 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 600V | 15A (Tc) | 500mOhm @ 7.5A, 10V | 10V | 4.5V @ 4mA | 170nC @ 10V | 4500pF @ 25V | ±20V | HiPerFET™ |
| IXTM50N20 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 200V | 50A (Tc) | 45mOhm @ 25A, 10V | 10V | 4V @ 250µA | 220nC @ 10V | 4600pF @ 25V | ±20V | GigaMOS™ |
| IXTM35N30 | POWER MOSFET TO-3 | IXYS | TO-204AE | Through Hole | TO-204AE | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 300V | 35A (Tc) | 100mOhm @ 17.5A, 10V | 10V | 4V @ 250µA | 220nC @ 10V | 4600pF @ 25V | ±20V | GigaMOS™ |
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