-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFM11N80 | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 800V | 11A (Tc) | 950mOhm @ 5.5A, 10V | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | HiPerFET™ |
| IXTM12N100 | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 1000V | 12A (Tc) | 1.05Ohm @ 6A, 10V | 10V | 4.5V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | GigaMOS™ |
| IXTM6N90A | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 900V | 6A (Tc) | 1.4Ohm @ 3A, 10V | 10V | 4.5V @ 250µA | 130nC @ 10V | 2600pF @ 25V | ±20V | |
| IXTM11N80 | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 800V | 11A (Tc) | 950mOhm @ 5.5A, 10V | 10V | 4.5V @ 250µA | 170nC @ 10V | 4500pF @ 25V | ±20V | GigaMOS™ |
| IXFM10N90 | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 300W (Tc) | 900V | 10A (Tc) | 1.1Ohm @ 5A, 10V | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | HiPerFET™ |
| IXTM5N100 | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 1000V | 5A (Tc) | 2.4Ohm @ 2.5A, 10V | 10V | 4.5V @ 250µA | 130nC @ 10V | 2600pF @ 25V | ±20V | |
| IXTM5N100A | POWER MOSFET TO-3 | IXYS | TO-204AA | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 180W (Tc) | 1000V | 5A (Tc) | 2Ohm @ 2.5A, 10V | 10V | 4.5V @ 250µA | 130nC @ 10V | 2600pF @ 25V | ±20V |
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