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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 694W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 960W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 400W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Series: HiPerFET™, Polar3™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1500W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 625W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 400W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 70V
- Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 490nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 700W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Series: Polar™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1100V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 890W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 20V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 550nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 800W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 580W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 600W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 595W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 500W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: IXYS
- Series: CoolMOS™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 290W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
-
- Manufacturer: IXYS
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 250A
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 730W
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