• Package / Case
    • Transistor Type
    • Technology
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    • Power Dissipation (Max)
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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 175
  • IXFN50N80Q2
    MOSFET N-CH 800V 50A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1135W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN26N120P
    MOSFET N-CH 1200V 23A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 460mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 695W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN140N20P
    MOSFET N-CH 200V 115A SOT227B
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 680W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
    • Vgs (Max): ±20V
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  • IXFN24N90Q
    MOSFET N-CH 900V 24A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
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  • IXFN200N07
    MOSFET N-CH 70V 200A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 70V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFE48N50QD3
    MOSFET N-CH 500V 41A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTN660N04T4
    40V/660A TRENCHT4 PWR MOSFET SOT
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT4™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • FET Feature: Current Sensing
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 860nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1040W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFE44N60
    MOSFET N-CH 600V 41A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN32N80P
    MOSFET N-CH 800V 29A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
    • Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN56N90P
    MOSFET N-CH 900V 56A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1000W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN26N100P
    MOSFET N-CH 1000V 23A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 595W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN106N20
    MOSFET N-CH 200V 106A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 521W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN100N20
    MOSFET N-CH 200V 100A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN80N50Q3
    MOSFET N-CH 500V 63A SOT-227
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 780W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN300N10P
    MOSFET N-CH 100V 295A SOT-227
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 295A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1070W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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