-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTX400N15X4 | MOSFET N-CH 150V 400A PLUS247 | IXYS | PLUS247™ | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1500W (Tc) | 150V | 400A (Tc) | 3.1mOhm @ 100A, 10V | 10V | 4.5V @ 1mA | 430nC @ 10V | 14500pF @ 25V | ±20V | |
IXFX52N100X | MOSFET 1KV 52A ULTRA JCT PLUS247 | IXYS | PLUS247™ | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1250W (Tc) | 1000V | 52A (Tc) | 125mOhm @ 26A, 10V | 10V | 6V @ 4mA | 245nC @ 10V | 6725pF @ 25V | ±30V | HiPerFET™ |
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