Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS PLUS220
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 360W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Technology: MOSFET (Metal Oxide)
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-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Technology: MOSFET (Metal Oxide)
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-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 500W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: IXYS
- Series: PolarHT™ HiPerFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 480W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: IXYS
- Series: TrenchHV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 625W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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- Manufacturer: IXYS
- Series: HiPerFET™, PolarP2™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 380W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
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-
- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 540W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 400W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 460W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 540W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
- 10
- 15
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- 100