Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS PLUS220

Found: 42
  • MOSFET N-CH 800V 12A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 300V 60A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 150V 130A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 800V 20A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 100V 110A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 480W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 250V 96A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
    • Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 900V 12A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 380W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 600V 30A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 540W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 200V 98A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 300V 72A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 800V 14A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 800V 16A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 250V 102A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 75V 170A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 500V 36A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 540W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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