• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 42
  • IXFV96N20P
    MOSFET N-CH 200V 96A PLUS 220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 600W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTV22N60P
    MOSFET N-CH 600V 22A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV74N20P
    MOSFET N-CH 200V 74A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 480W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFV30N50P
    MOSFET N-CH 500V 30A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV12N120P
    MOSFET N-CH 1200V 12A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 543W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV18N90P
    MOSFET N-CH 900V 18A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
    • Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 540W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTV26N50P
    MOSFET N-CH 500V 26A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV26N50P
    MOSFET N-CH 500V 26A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTV22N50P
    MOSFET N-CH 500V 22A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 350W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTV200N10T
    MOSFET N-CH 100V 200A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 550W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFV96N15P
    MOSFET N-CH 150V 96A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™ HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 480W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFV22N60P
    MOSFET N-CH 600V 22A PLUS220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3, Short Tab
    • Supplier Device Package: PLUS220
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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