Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS ISOPLUS247™

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 100
  • IXTR48P20P
    MOSFET P-CH 200V 30A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 190W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR80N15Q
    MOSFET N-CH 150V 75A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
    • Rds On (Max) @ Id, Vgs: 22.5mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 310W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR9N80Q
    MOSFET N-CH 800V ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Technology: MOSFET (Metal Oxide)
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  • IXFR40N50Q2
    MOSFET N-CH 500V 29A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
    • Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR24N90P
    MOSFET N-CH 900V 13A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 460mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR13N50
    MOSFET N-CH 500V 13A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXTR90P10P
    MOSFET P-CH 100V 57A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 190W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR30N50Q
    MOSFET N-CH 500V 30A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 310W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR52N30Q
    MOSFET N-CH 300V ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Technology: MOSFET (Metal Oxide)
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  • IXTR102N65X2
    MOSFET N-CH 650V 54A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 330W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR44N80P
    MOSFET N-CH 800V 25A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR32N80Q3
    MOSFET N-CH 800V 24A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR32N80P
    MOSFET N-CH 800V 20A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
    • Rds On (Max) @ Id, Vgs: 290mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTR90P20P
    MOSFET P-CH 200V 53A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
    • Rds On (Max) @ Id, Vgs: 48mOhm @ 45A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 312W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR50N50
    MOSFET N-CH 500V 43A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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