• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 100
  • IXTR68P20T
    DISCMSFT PCHAN-TRENCH GATE ISOPL
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
    • Rds On (Max) @ Id, Vgs: 64mOhm @ 34A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 33400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 270W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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  • IXFR80N50Q3
    MOSFET N-CH 500V 50A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 72mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 570W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR100N25
    MOSFET N-CH 250V 87A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
    • Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR64N60P
    MOSFET N-CH 600V 36A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 105mOhm @ 32A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTR30N25
    MOSFET N-CH 250V 25A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR180N15P
    MOSFET N-CH 150V 100A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR48N60Q3
    MOSFET N-CH 600V 32A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
    • Rds On (Max) @ Id, Vgs: 154mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTR200N10P
    MOSFET N-CH 100V 120A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR26N50Q
    MOSFET N-CH 500V 24A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR26N120P
    MOSFET N-CH 1200V 15A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR70N15
    MOSFET N-CH 150V 67A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
    • Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR30N60P
    MOSFET N-CH 600V 15A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 166W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR200N10P
    MOSFET N-CH 100V 133A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR27N80Q
    MOSFET N-CH 800V 27A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
    • Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTR16P60P
    MOSFET P-CH 600V 10A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 790mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 190W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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