• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 100
  • IXKR47N60C5
    MOSFET N-CH 600V 47A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR48N50Q
    MOSFET N-CH 500V 40A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 310W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR38N80Q2
    MOSFET N-CH 800V 28A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 19A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 416W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR32N100Q3
    MOSFET N-CH 1000V 23A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 570W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR25N90
    MOSFET N-CH 900V 25A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFR15N80Q
    MOSFET N-CH 800V 13A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
    • Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 250W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR15N100Q3
    MOSFET N-CH 1000V 10A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR48N60P
    MOSFET N-CH 600V 32A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR20N100P
    MOSFET N-CH 1000V 11A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 640mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 230W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR12N120P
    MOSFET N-CH 1200V ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Technology: MOSFET (Metal Oxide)
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  • IXFR4N100Q
    MOSFET N-CH 1KV 3.5A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 80W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFR64N50P
    MOSFET N-CH 500V 35A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR44N50P
    MOSFET N-CH 500V 24A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 150mOhm @ 22A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 208W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFR14N100Q2
    MOSFET N-CH 1KV 9.5A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUS247™
    • Supplier Device Package: ISOPLUS247™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTR120P20T
    MOSFET P-CH 200V 90A ISOPLUS247
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchP™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: ISOPLUS247™
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 32mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 595W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±15V
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