-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
275-501N16A-00 | RF MOSFET N-CHANNEL DE275 | IXYS-RF | DE275 | 590W | 500V | 16A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |||
275-101N30A-00 | RF MOSFET N-CHANNEL DE275 | IXYS-RF | DE275 | 550W | 100V | 30A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |||
DE275-102N06A | RF MOSFET N-CHANNEL DE275 | IXYS-RF | DE275 | 590W | 1000V | 8A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |||
275X2-501N16A-00 | RF MOSFET 2 N-CHANNEL DE275 | IXYS-RF | DE275 | 1180W | 500V | 16A | 8-SMD, Flat Lead Exposed Pad | 2 N-Channel (Dual) | DE | |||
275X2-102N06A-00 | RF MOSFET 2 N-CHANNEL DE275 | IXYS-RF | DE275 | 1180W | 1000V | 8A | 8-SMD, Flat Lead Exposed Pad | 2 N-Channel (Dual) | DE | |||
IXZ210N50L2 | RF MOSFET N-CHANNEL DE275 | IXYS-RF | DE275 | 390W | 70MHz | 500V | 10A | 6-SMD, Flat Lead Exposed Pad | N-Channel | 17dB | 100V | Z-MOS™ |
275-201N25A-00 | RF MOSFET N-CHANNEL DE275 | IXYS-RF | DE275 | 590W | 200V | 25A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE |
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