-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Current - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|
DE150-102N02A | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 1000V | 2A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |
150-102N02A-00 | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 1000V | 2A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |
150-201N09A-00 | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 200V | 9A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |
150-101N09A-00 | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 100V | 9A | 6-SMD, Flat Lead Exposed Pad | N-Channel | DE | |
DE150-501N04A | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 500V | 4.5A | 6-SMD, Flat Lead Exposed Pad | N-Channel | 25µA | DE |
150-501N04A-00 | RF MOSFET N-CHANNEL DE150 | IXYS-RF | DE150 | 200W | 500V | 4.5A | 6-SMD, Flat Lead Exposed Pad | N-Channel | 25µA | DE |
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