-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXRFSM18N50 | 18A 500V MOSFET IN SMPD PACKAGE | IXYS-RF | 16-SMPD | Surface Mount | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 835W | 500V | 19A (Tc) | 340mOhm @ 9.5A, 20V | 20V | 6.5V @ 250µA | 42nC @ 10V | 2250pF @ 400V | ±20V | SMPD |
IXRFSM12N100 | 2A 1000V MOSFET IN SMPD PACKAGE | IXYS-RF | 16-SMPD | Surface Mount | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 940W | 1000V | 12A (Tc) | 1.05Ohm @ 6A, 15V | 15V | 5.5V @ 250µA | 77nC @ 10V | 2875pF @ 800V | ±20V | SMPD |
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