• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 1
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
IGN1011L70 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc. PL32A2 80W 1.03GHz ~ 1.09GHz 120V PL32A2 GaN HEMT 22dB 50V 22mA
  • 10
  • 15
  • 50
  • 100