• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
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List Table
Found: 1
  • IGN1011L70
    GAN, RF POWER TRANSISTOR, L-BAND
    Integra Technologies Inc.
    • Manufacturer: Integra Technologies Inc.
    • Package / Case: PL32A2
    • Supplier Device Package: PL32A2
    • Frequency: 1.03GHz ~ 1.09GHz
    • Voltage - Rated: 120V
    • Current - Test: 22mA
    • Power - Output: 80W
    • Transistor Type: GaN HEMT
    • Gain: 22dB
    • Voltage - Test: 50V
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