- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
IGN1011L1200 | GAN, RF POWER TRANSISTOR, L-BAND | Integra Technologies Inc. | PL84A1 | 1250W | 1.03GHz ~ 1.09GHz | 180V | PL84A1 | HEMT | 16.8dB | 50V | 160mA |
IGT8292M50 | GAN, RF POWER TRANSISTOR, X-BAND | Integra Technologies Inc. | |||||||||
IGN1214L500B | GAN, RF POWER TRANSISTOR, L-BAND | Integra Technologies Inc. | PL95A1 | 650W | 1.2GHz ~ 1.4GHz | 160V | PL95A1 | HEMT | 15dB | 50V | 200mA |
IGT2731M130 | GAN, RF POWER TRANSISTOR, S-BAND | Integra Technologies Inc. | |||||||||
IGN1214M300 | GAN, RF POWER TRANSISTOR, L-BAND | Integra Technologies Inc. | |||||||||
IGT5259CW50 | GAN, RF POWER TRANSISTOR, C-BAND | Integra Technologies Inc. | |||||||||
IGN2729M400R2 | GAN, RF POWER TRANSISTOR, S-BAND | Integra Technologies Inc. | |||||||||
IGN0912LM500 | GAN, RF POWER TRANSISTOR, L-BAND | Integra Technologies Inc. | |||||||||
IGN1011L70 | GAN, RF POWER TRANSISTOR, L-BAND | Integra Technologies Inc. | PL32A2 | 80W | 1.03GHz ~ 1.09GHz | 120V | PL32A2 | GaN HEMT | 22dB | 50V | 22mA |
IGT1112M90 | GAN, RF POWER TRANSISTOR, X-BAND | Integra Technologies Inc. |
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