-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS3207ZTRRPBF | MOSFET N-CH 75V 120A D2PAK | Infineon Technologies | D²PAK (TO-263) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 75V | 120A (Tc) | 4.1mOhm @ 75A, 10V | 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | ±20V | HEXFET® |
| IRFS3307ZTRRPBF | MOSFET N-CH 75V 120A D2PAK | Infineon Technologies | D²PAK (TO-263) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 75V | 120A (Tc) | 5.8mOhm @ 75A, 10V | 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | ±20V | HEXFET® |
| IRFS3207ZPBF | MOSFET N-CH 75V 120A D2PAK | Infineon Technologies | D²PAK (TO-263) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 75V | 120A (Tc) | 4.1mOhm @ 75A, 10V | 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | ±20V | HEXFET® |
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