• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
FF8MR12W2M1B11BOMA1 MOSFET 2N-CH 1200V AG-EASY2BM-2 Infineon Technologies AG-EASY2BM-2 20mW (Tc) Chassis Mount Module -40°C ~ 150°C (TJ) 2 N-Channel (Dual) 1200V (1.2kV) 150A (Tj) Silicon Carbide (SiC) 7.5mOhm @ 150A, 15V (Typ) 5.55V @ 60mA 372nC @ 15V 11000pF @ 800V CoolSiC™+
FF6MR12W2M1B11BOMA1 MOSFET MODULE 1200V 200A Infineon Technologies AG-EASY2BM-2 20mW (Tc) Chassis Mount Module -40°C ~ 150°C (TJ) 2 N-Channel (Dual) 1200V (1.2kV) 200A (Tj) Silicon Carbide (SiC) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V CoolSiC™+
  • 10
  • 15
  • 50
  • 100