-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DF11MR12W1M1B11BOMA1 | MOSFET MODULE 1200V 50A | Infineon Technologies | AG-EASY1BM-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A | Silicon Carbide (SiC) | 23mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V | |
| FF08MR12W1MA1B11ABPSA1 | EASY PACK | Infineon Technologies | AG-EASY1BM-2 | 20mW (Tc) | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 150A (Tj) | Silicon Carbide (SiC) | 9.8mOhm @ 150A, 15V | 5.55V @ 90mA | 15V | 600V | CoolSiC™+ |
| FS45MR12W1M1B11BOMA1 | MOSFET MODULE 1200V 50A | Infineon Technologies | AG-EASY1BM-2 | 20mW (Tc) | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 25A (Tj) | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | CoolSiC™+ |
| DF23MR12W1M1B11BOMA1 | MOSFET MODULE 1200V 25A | Infineon Technologies | AG-EASY1BM-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V | 5.5V @ 10mA | 620nC @ 15V | 2000pF @ 800V | |
| DF23MR12W1M1B11BPSA1 | MOSFET MOD 1200V 25A | Infineon Technologies | AG-EASY1BM-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A (Tj) | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | CoolSiC™+ |
| DF11MR12W1M1B11BPSA1 | MOSFET MOD 1200V 50A | Infineon Technologies | AG-EASY1BM-2 | 20mW | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 50A (Tj) | Silicon Carbide (SiC) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | CoolSiC™+ |
| FF45MR12W1M1B11BOMA1 | MOSFET MODULE 1200V 50A | Infineon Technologies | AG-EASY1BM-2 | 20mW (Tc) | Chassis Mount | Module | -40°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A (Tj) | Silicon Carbide (SiC) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | CoolSiC™+ |
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