• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 563
  • IRF7205TRPBF
    MOSFET P-CH 30V 4.6A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF6216PBF
    MOSFET P-CH 150V 2.2A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7210PBF
    MOSFET P-CH 12V 16A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 12V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
    • Vgs(th) (Max) @ Id: 600mV @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 212nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 17179pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • IRF7413ZGTRPBF
    MOSFET N-CH 30V 13A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 2.25V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7316TRPBF
    MOSFET 2P-CH 30V 4.9A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.9A
    • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Power - Max: 2W
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  • AUIRF9952QTR
    MOSFET N/P-CH 30V 3.5A/2.3A 8SO
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
    • Power - Max: 2W
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  • IRF7807VTRPBF
    MOSFET N-CH 30V 8.3A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V
    • Vgs (Max): ±20V
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  • IRF3717PBF
    MOSFET N-CH 20V 20A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.45V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7314PBF
    MOSFET 2P-CH 20V 5.3A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A
    • Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
    • Power - Max: 2W
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  • IRF7322D1TRPBF
    MOSFET P-CH 20V 5.3A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FETKY™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • FET Feature: Schottky Diode (Isolated)
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 2.9A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
    • Vgs (Max): ±12V
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  • SI4435DYTR
    MOSFET P-CH 30V 8A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7807VTR
    MOSFET N-CH 30V 8.3A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V
    • Vgs (Max): ±20V
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  • SI4420DY
    MOSFET N-CH 30V 12.5A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7307TRPBF
    MOSFET N/P-CH 20V 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
    • Power - Max: 2W
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  • IRF8721PBF
    MOSFET N-CH 30V 14A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
    • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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