• Package / Case
    • Тип транзистора
    • Технология
    • Рабочая температура
    • Тип канала
    • Усиление
    • Коэффициент шума
    • Рассеиваемая мощность (Макс)
    • Напряжение сток-исток (Vdss)
    • Voltage - Test
    • Current - Test
    • Непрерывный ток стока (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Пороговое напряжение затвора (Max) @ Id
    • Заряд затвора (Qg) (Max) @ Vgs
    • Входная емкость (Ciss) (Max) @ Vds
    • Напряжение затвора (макс)
    • Серия
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Списком Таблицей
Найдено: 563
Наименование Описание Производитель
Тип корпуса
Мощность - Макс.
Вид монтажа
Package / Case
Технология
Рабочая температура
Тип канала
Рассеиваемая мощность (Макс)
Напряжение сток-исток (Vdss)
Непрерывный ток стока (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Пороговое напряжение затвора (Max) @ Id
Заряд затвора (Qg) (Max) @ Vgs
Входная емкость (Ciss) (Max) @ Vds
Напряжение затвора (макс)
Серия
IRF7205TRPBF MOSFET P-CH 30V 4.6A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Tc) 30V 4.6A (Ta) 70mOhm @ 4.6A, 10V 4.5V, 10V 3V @ 250µA 40nC @ 10V 870pF @ 10V ±20V HEXFET®
IRF6216PBF MOSFET P-CH 150V 2.2A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 150V 2.2A (Ta) 240mOhm @ 1.3A, 10V 10V 5V @ 250µA 49nC @ 10V 1280pF @ 25V ±20V HEXFET®
IRF7210PBF MOSFET P-CH 12V 16A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 12V 16A (Ta) 7mOhm @ 16A, 4.5V 2.5V, 4.5V 600mV @ 500µA 212nC @ 5V 17179pF @ 10V ±12V HEXFET®
IRF7413ZGTRPBF MOSFET N-CH 30V 13A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 13A (Ta) 10mOhm @ 13A, 10V 4.5V, 10V 2.25V @ 25µA 14nC @ 4.5V 1210pF @ 15V ±20V HEXFET®
IRF7316TRPBF MOSFET 2P-CH 30V 4.9A 8SO Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 30V 4.9A Logic Level Gate 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V HEXFET®
AUIRF9952QTR MOSFET N/P-CH 30V 3.5A/2.3A 8SO Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 30V 3.5A, 2.3A Logic Level Gate 100mOhm @ 2.2A, 10V 3V @ 250µA 14nC @ 10V 190pF @ 15V HEXFET®
IRF7807VTRPBF MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) 25mOhm @ 7A, 4.5V 4.5V 3V @ 250µA 14nC @ 5V ±20V HEXFET®
IRF3717PBF MOSFET N-CH 20V 20A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 20V 20A (Ta) 4.4mOhm @ 20A, 10V 4.5V, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V ±20V HEXFET®
IRF7314PBF MOSFET 2P-CH 20V 5.3A 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 5.3A Logic Level Gate 58mOhm @ 2.9A, 4.5V 700mV @ 250µA 29nC @ 4.5V 780pF @ 15V HEXFET®
IRF7322D1TRPBF MOSFET P-CH 20V 5.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2W (Ta) 20V 5.3A (Ta) Schottky Diode (Isolated) 62mOhm @ 2.9A, 4.5V 2.7V, 4.5V 700mV @ 250µA 29nC @ 4.5V 780pF @ 15V ±12V FETKY™
SI4435DYTR MOSFET P-CH 30V 8A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 2.5W (Ta) 30V 8A (Tc) 20mOhm @ 8A, 10V 4.5V, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V ±20V HEXFET®
IRF7807VTR MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) 25mOhm @ 7A, 4.5V 4.5V 3V @ 250µA 14nC @ 5V ±20V HEXFET®
SI4420DY MOSFET N-CH 30V 12.5A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 12.5A (Ta) 9mOhm @ 12.5A, 10V 4.5V, 10V 1V @ 250µA 78nC @ 10V 2240pF @ 15V ±20V HEXFET®
IRF7307TRPBF MOSFET N/P-CH 20V 8-SOIC Infineon Technologies 8-SO 2W Surface Mount 8-SOIC (0.154", 3.90mm Width) -55°C ~ 150°C (TJ) N and P-Channel 20V 5.2A, 4.3A Logic Level Gate 50mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V HEXFET®
IRF8721PBF MOSFET N-CH 30V 14A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 14A (Ta) 8.5mOhm @ 14A, 10V 4.5V, 10V 2.35V @ 25µA 12nC @ 4.5V 1040pF @ 15V ±20V HEXFET®
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