-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7494TR | MOSFET N-CH 150V 5.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 150V | 5.2A (Ta) | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | HEXFET® | ||||||
| IRF7459PBF | MOSFET N-CH 20V 12A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 20V | 12A (Ta) | 9mOhm @ 12A, 10V | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2480pF @ 10V | ±12V | HEXFET® | ||
| IRF7468PBF | MOSFET N-CH 40V 9.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 9.4A (Ta) | 15.5mOhm @ 9.4A, 10V | 4.5V, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | ±12V | HEXFET® | ||
| IRF8707TRPBF | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 11.9mOhm @ 11A, 10V | 4.5V, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | ±20V | HEXFET® | ||
| IRF7805ZGTRPBF | MOSFET N-CH 30V 16A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 16A (Ta) | 6.8mOhm @ 16A, 10V | 4.5V, 10V | 2.25V @ 250µA | 27nC @ 4.5V | 2080pF @ 15V | ±20V | HEXFET® | ||
| IRF7807VD2TR | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 1V @ 250µA | 14nC @ 4.5V | ±20V | FETKY™ | ||
| IRF7478PBF | MOSFET N-CH 60V 7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 60V | 7A (Ta) | 26mOhm @ 4.2A, 10V | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | HEXFET® | ||
| IRF7426TR | MOSFET N-CH 20V 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 20V | HEXFET® | |||||||||||
| IRF7805ATR | MOSFET N-CH 30V 13A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13A (Ta) | 11mOhm @ 7A, 4.5V | 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | HEXFET® | |||
| IRF7492 | MOSFET N-CH 200V 3.7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 3.7A (Ta) | 79mOhm @ 2.2A, 10V | 10V | 2.5V @ 250µA | 59nC @ 10V | 1820pF @ 25V | ±20V | HEXFET® | ||
| IRF1902PBF | MOSFET N-CH 20V 4.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 20V | 4.2A (Ta) | 85mOhm @ 4A, 4.5V | 2.7V, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | 310pF @ 15V | ±12V | HEXFET® | ||
| BSO4410 | MOSFET N-CH 30V 11.1A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11.1A (Ta) | 13mOhm @ 11.1A, 10V | 4.5V, 10V | 2V @ 42µA | 21nC @ 5V | 1280pF @ 25V | ±20V | OptiMOS™ | ||
| IRF9358TRPBF | MOSFET 2P-CH 30V 9.2A 8SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 30V | 9.2A | Logic Level Gate | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | HEXFET® | ||||
| IRF7471TR | MOSFET N-CH 40V 10A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 10A (Ta) | 13mOhm @ 10A, 10V | 4.5V, 10V | 3V @ 250µA | 32nC @ 4.5V | 2820pF @ 20V | ±20V | HEXFET® | ||
| IRF7807D2PBF | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | FETKY™ |
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