-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSO211PH | 3.2A, 20V, 0.067OHM, 2-ELEMENT, | Infineon Technologies | 532-FCBGA (23x23) | 1.6W (Ta) | Surface Mount | 532-BFBGA, FCBGA | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4A (Ta) | Logic Level Gate, 2.5V Drive | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | 1095pF @ 15V | OptiMOS™ P |
- 10
- 15
- 50
- 100