-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF3575DTRPBF | MOSFET 2N-CH 25V 303A PQFN | Infineon Technologies | 32-PQFN (6x6) | Surface Mount | 32-PowerWFQFN | 2 N-Channel (Dual) | 25V | 303A (Tc) | Standard | |||||||
IRFHE4250DTRPBF | MOSFET 2N-CH 25V 86A/303A PQFN | Infineon Technologies | 32-PQFN (6x6) | 156W | Surface Mount | 32-PowerWFQFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 86A, 303A | Logic Level Gate | 2.75mOhm @ 27A, 10V | 2.1V @ 35µA | 20nC @ 4.5V | 1735pF @ 13V | FASTIRFET™ |
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