-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
PTFA192001EV4XWSA1 | FET RF 65V 1.99GHZ H-36260-2 | Infineon Technologies | H-36260-2 | 50W | 1.99GHz | 65V | 10µA | H-36260-2 | LDMOS | 15.9dB | 30V | 1.8A |
PTFA192401EV4R250FTMA1 | FET RF 65V 1.96GHZ H-36260-2 | Infineon Technologies | H-36260-2 | 50W | 1.96GHz | 65V | 10µA | H-36260-2 | LDMOS | 16dB | 30V | 1.6A |
PTFA192001FV4FWSA1 | IC FET RF LDMOS 200W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 1.99GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.9dB | 30V | 1.8A |
PTFA212401F V4 R250 | IC FET RF LDMOS 240W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.8dB | 30V | 1.6A |
PTFA212001F1V4XWSA1 | IC RF POWER TRANSISTOR | Infineon Technologies | H-37260-2 | 50W | 2.14GHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.8dB | 30V | 1.6A | |
PTFA212001FV4XWSA1 | IC FET RF LDMOS 200W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.8dB | 30V | 1.6A |
PTFA212001F/1 P4 | IC FET RF LDMOS 200W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.8dB | 30V | 1.6A |
PTFA192401FV4R250XTMA1 | IC FET RF LDMOS 240W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 1.96GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 16dB | 30V | 1.6A |
PTFA092211FLV4R250XTMA1 | IC FET RF LDMOS | Infineon Technologies | H-34288-2 | 50W | 920MHz ~ 960MHz | 65V | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.75A | |
PTFA212401F V4 | IC FET RF LDMOS 240W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.8dB | 30V | 1.6A |
PTFA212001EV4XWSA1 | FET RF 65V 2.14GHZ H-36260-2 | Infineon Technologies | H-36260-2 | 50W | 2.14GHz | 65V | 10µA | H-36260-2 | LDMOS | 15.8dB | 30V | 1.6A |
PTFA192401EV4XWSA1 | FET RF 65V 1.96GHZ H-36260-2 | Infineon Technologies | H-36260-2 | 50W | 1.96GHz | 65V | 10µA | H-36260-2 | LDMOS | 16dB | 30V | 1.6A |
PTFA192401FV4XWSA1 | IC FET RF LDMOS 240W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 1.96GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 16dB | 30V | 1.6A |
PTFA212401E V4 R250 | FET RF 65V 2.14GHZ H-36260-2 | Infineon Technologies | H-36260-2 | 50W | 2.14GHz | 65V | 10µA | H-36260-2 | LDMOS | 15.8dB | 30V | 1.6A |
PTFA192001F V4 R250 | IC FET RF LDMOS 200W H-37260-2 | Infineon Technologies | H-37260-2 | 50W | 1.99GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.9dB | 30V | 1.8A |
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