• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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  • 100
List Table
Found: 6
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Frequency
Voltage - Rated
Package / Case
Transistor Type
Gain
Voltage - Test
Current - Test
PTFB211501FV1R0XTMA1 IC AMP RF LDMOS H-37248-2 Infineon Technologies H-37248-2 40W 2.17GHz 65V 2-Flatpack, Fin Leads, Flanged LDMOS 18dB 30V 1.2A
PTFB211803ELV1R250XTMA1 IC AMP RF LDMOS Infineon Technologies H-33288-6 40W 2.17GHz 65V H-33288-6 LDMOS 17.5dB 30V 1.3A
PTFB211501FV1R250XTMA1 FET RF 65V 2.17GHZ H37248-2 Infineon Technologies H-37248-2 40W 2.17GHz 65V 2-Flatpack, Fin Leads, Flanged LDMOS 18dB 30V 1.2A
PTFB211803ELV1R0XTMA1 IC AMP RF LDMOS H-33288-6 Infineon Technologies H-33288-6 40W 2.17GHz 65V H-33288-6 LDMOS 17.5dB 30V 1.3A
PTFB211803FLV2R250XTMA1 IC AMP RF LDMOS Infineon Technologies H-34288-4/2 40W 2.17GHz 65V 2-Flatpack, Fin Leads, Flanged LDMOS 17.5dB 30V 1.3A
PTFB211803FLV2R0XTMA1 IC AMP RF LDMOS H-34288-4 Infineon Technologies H-34288-4/2 40W 2.17GHz 65V 2-Flatpack, Fin Leads, Flanged LDMOS 17.5dB 30V 1.3A
  • 10
  • 15
  • 50
  • 100