-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
PTFA210701FV4R250XTMA1 | IC FET RF LDMOS 70W H-37265-2 | Infineon Technologies | H-37265-2 | 18W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 16.5dB | 30V | 550mA |
PTFA210701EV4R250XTMA1 | IC FET RF LDMOS 70W H-36265-2 | Infineon Technologies | H-36265-2 | 18W | 2.14GHz | 65V | 10µA | H-36265-2 | LDMOS | 16.5dB | 30V | 550mA |
PTFA210701FV4FWSA1 | IC FET RF LDMOS 70W H-37265-2 | Infineon Technologies | H-37265-2 | 18W | 2.14GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 16.5dB | 30V | 550mA |
PTFA210701EV4T500XWSA1 | IC FET RF LDMOS | Infineon Technologies | H-36265-2 | 18W | 2.11GHz ~ 2.17GHz | 65V | H-36265-2 | LDMOS | 16.5dB | 30V | 550mA | |
PTFA210701EV4XWSA1 | IC FET RF LDMOS 70W H-36265-2 | Infineon Technologies | H-36265-2 | 18W | 2.14GHz | 65V | 10µA | H-36265-2 | LDMOS | 16.5dB | 30V | 550mA |
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