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    • Current - Continuous Drain (Id) @ 25°C
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    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
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List Table
Found: 7734
  • IRF7459PBF
    MOSFET N-CH 20V 12A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
    • Vgs (Max): ±12V
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  • SPU02N60C3BKMA1
    MOSFET N-CH 650V 1.8A IPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: PG-TO251-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
    • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 80µA
    • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7707TRPBF
    MOSFET P-CH 20V 7A 8-TSSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
    • Supplier Device Package: 8-TSSOP
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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  • BSP92P E6327
    MOSFET P-CH 250V 0.26A SOT-223
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-261-4, TO-261AA
    • Supplier Device Package: PG-SOT223-4
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
    • Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V
    • Vgs(th) (Max) @ Id: 2V @ 130µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1.8W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
    • Vgs (Max): ±20V
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  • IPB120N04S401ATMA1
    MOSFET N-CH 40V 120A TO263-3-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 140µA
    • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 188W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFR7746PBF
    MOSFET N-CH 75V 56A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252AA)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
    • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 3.7V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3107pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 99W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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  • IRF7468PBF
    MOSFET N-CH 40V 9.4A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
    • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±12V
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  • IPD90N10S4L06ATMA1
    MOSFET N-CH TO252-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3-313
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 90µA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 136W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IRLR3715PBF
    MOSFET N-CH 20V 54A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
    • Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPU80R1K4CEBKMA1
    MOSFET N-CH 800V 3.9A TO251-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Supplier Device Package: PG-TO251-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 240µA
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 63W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF8707TRPBF
    MOSFET N-CH 30V 11A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
    • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SIPC10N80C3X1SA1
    TRANSISTOR N-CH
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • IRF7805ZGTRPBF
    MOSFET N-CH 30V 16A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
    • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 2.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • PTFA091201HL V1 R250
    IC FET RF LDMOS 120W PG-64248-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Package / Case: 2-Flatpack, Fin Leads, Flanged
    • Supplier Device Package: PG-64248-2
    • Frequency: 960MHz
    • Voltage - Rated: 65V
    • Current - Test: 750mA
    • Power - Output: 110W
    • Transistor Type: LDMOS
    • Gain: 18.5dB
    • Voltage - Test: 28V
    • Current Rating (Amps): 10µA
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  • IPB110P06LMATMA1
    MOSFET P-CH 60V TO263-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: PG-TO263-3-2
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 5.55mA
    • Gate Charge (Qg) (Max) @ Vgs: 281nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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