• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
EPC2014 GANFET TRANS 40V 10A BUMPED DIE EPC Die Outline (5-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 40V 10A (Ta) 16mOhm @ 5A, 5V 5V 2.5V @ 2mA 2.8nC @ 5V 325pF @ 20V +6V, -5V eGaN®
EPC2007 GANFET TRANS 100V 6A BUMPED DIE EPC Die Outline (5-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) N-Channel 100V 6A (Ta) 30mOhm @ 6A, 5V 5V 2.5V @ 1.2mA 2.8nC @ 5V 205pF @ 50V +6V, -5V eGaN®
EPC2014C GANFET TRANS 40V 10A BUMPED DIE EPC Die Outline (5-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 40V 10A (Ta) 16mOhm @ 10A, 5V 5V 2.5V @ 2mA 2.5nC @ 5V 300pF @ 20V +6V, -4V eGaN®
EPC2007C GANFET TRANS 100V 6A BUMPED DIE EPC Die Outline (5-Solder Bar) Surface Mount Die GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) N-Channel 100V 6A (Ta) 30mOhm @ 6A, 5V 5V 2.5V @ 1.2mA 2.2nC @ 5V 220pF @ 50V +6V, -4V eGaN®
  • 10
  • 15
  • 50
  • 100