• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
EPC2107 GANFET 3 N-CH 100V 9BGA EPC 9-BGA (1.35x1.35) Surface Mount 9-VFBGA -40°C ~ 150°C (TJ) 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA GaNFET (Gallium Nitride) 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.16nC @ 5V, 0.044nC @ 5V 16pF @ 50V, 7pF @ 50V eGaN®
EPC2108 GANFET 3 N-CH 60V/100V 9BGA EPC 9-BGA (1.35x1.35) Surface Mount 9-VFBGA -40°C ~ 150°C (TJ) 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA GaNFET (Gallium Nitride) 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V 2.5V @ 100µA, 2.5V @ 20µA 0.22nC @ 5V, 0.044nC @ 5V 22pF @ 30V, 7pF @ 30V eGaN®
  • 10
  • 15
  • 50
  • 100