-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GTVA101K42EV-V1-R250 | GAN HEMT 50V 1400W 0.96-1.4GHZ | Cree/Wolfspeed | H-36275-4 | 1400W | 960MHz ~ 1.215GHz | 125V | H-36275-4 | HEMT | 17dB | 50V | 200mA | GaN | |
| GTVA101K42EV-V1-R0 | GAN HEMT 50V 1400W 0.96-1.4GHZ | Cree/Wolfspeed | H-36275-4 | 1400W | 960MHz ~ 1.215GHz | 125V | H-36275-4 | HEMT | 17dB | 50V | GaN | ||
| PTVA035002EV-V1-R0 | IC AMP RF LDMOS H-36275-4 | Cree/Wolfspeed | H-36275-4 | 500W | 390MHz ~ 450MHz | 105V | H-36275-4 | LDMOS | 18dB | 50V | 500mA | ||
| PTVA101K02EV-V1-R0 | IC AMP RF LDMOS H-36275-4 | Cree/Wolfspeed | H-36275-4 | 900W | 1.03GHz ~ 1.09GHz | 105V | H-36275-4 | LDMOS | 21dB | 50V | 150mA | ||
| PTVA035002EV-V1-R250 | RF LDMOS FET 500W, 390 - 450MHZ | Cree/Wolfspeed | H-36275-4 | 500W | 390MHz ~ 450MHz | 105V | 10µA | H-36275-4 | LDMOS (Dual), Common Source | 18dB | 50V | 500mA | |
| PTVA127002EV-V1-R0 | IC AMP RF LDMOS H-36275-4 | Cree/Wolfspeed | H-36275-4 | 700W | 1.2GHz ~ 1.4GHz | 105V | 10µA | H-36275-4 | LDMOS | 16dB | 50V | 150mA |
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