Found: 18
Partnumber Description Manufacturer
Supplier Device Package
Power - Output
Mounting Type
Frequency
Voltage - Rated
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
CGH60060D-GP4 RF MOSFET HEMT 28V DIE Cree/Wolfspeed Die 60W 6GHz 84V Die HEMT 13dB 28V 400mA GaN
CGHV1J070D-GP4 RF MOSFET HEMT 40V DIE Cree/Wolfspeed Die 70W 18GHz 100V Die HEMT 17dB 40V 360mA GaN
CPMF-1200-S160B MOSFET N-CHANNEL 1200V 28A DIE Cree/Wolfspeed Die Surface Mount Die SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 202W (Tj) 1200V 28A (Tj) 220mOhm @ 10A, 20V 20V 4V @ 1mA 47.1nC @ 20V 928pF @ 800V +25V, -5V Z-FET™
CGHV1J025D-GP4 RF MOSFET HEMT 40V DIE Cree/Wolfspeed Die 25W 18GHz 100V Die HEMT 17dB 40V 120mA GaN
CPMF-1200-S080B MOSFET N-CHANNEL 1200V 50A DIE Cree/Wolfspeed Die Surface Mount Die SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) N-Channel 313mW (Tj) 1200V 50A (Tj) 110mOhm @ 20A, 20V 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V +25V, -5V Z-FET™
CG2H80045D-GP4 45W, GAN HEMT, 28V, DC-8.0GHZ, B Cree/Wolfspeed Die 45W 8GHz 120V Die HEMT 15dB 28V 500mA GaN
CGHV60170D-GP4 RF MOSFET HEMT 50V DIE Cree/Wolfspeed Die 170W 6GHz 150V Die HEMT 17dB 50V 260mA GaN
CGH60008D-GP4 RF MOSFET HEMT 28V DIE Cree/Wolfspeed Die 8W 6GHz 84V Die HEMT 15dB 28V 100mA GaN
CG2H80030D-GP4 RF MOSFET HEMT 28V DIE Cree/Wolfspeed Die 30W 8GHz 84V Die HEMT 16.5dB 28V 200mA GaN
CGH60030D-GP4 RF MOSFET HEMT 28V DIE Cree/Wolfspeed Die 30W 6GHz 84V Die HEMT 15dB 28V 250mA GaN