-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CGHV14250F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 330W | 1.2GHz ~ 1.4GHz | 125V | 42mA | 440162 | HEMT | 18dB | 50V | 500mA | GaN |
| CGH21120F | 120W, GAN HEMT, 28V, 1.8-2.1GHZ, | Cree/Wolfspeed | 440162 | 120W | 1.8GHz ~ 2.3GHz | 84V | 440162 | HEMT | 15dB | 28V | 500mA | GaN | |
| CGH25120F | 120W GAN HEMT 28V 2.5-2.7GHZ FET | Cree/Wolfspeed | 440162 | 130W | 2.3GHz ~ 2.7GHz | 84V | 440162 | HEMT | 12.5dB | 28V | 500mA | GaN | |
| CGHV27100F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 100W | 2.5GHz ~ 2.7GHz | 50V | 6A | 440162 | HEMT | 18dB | 50V | 500mA | GaN |
| CGHV22200F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 200W | 1.8GHz ~ 2.2GHz | 125V | 12A | 440162 | HEMT | 18dB | 50V | 1A | GaN |
| CGHV35120F | 120W, GAN HEMT, 50V, 3.1-3.5GHZ, | Cree/Wolfspeed | 440162 | 120W | 3.1GHz ~ 3.5GHz | 125V | 440162 | HEMT | 13dB | 48V | 220mA | GaN | |
| CGHV27200F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 200W | 2.5GHz ~ 2.7GHz | 50V | 12A | 440162 | HEMT | 15dB ~ 16dB | 50V | 1A | GaN |
| CGHV22100F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 100W | 1.8GHz ~ 2.2GHz | 125V | 6A | 440162 | HEMT | 20dB | 50V | 500mA | GaN |
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