-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTAB182002FC-V1-R0 | IC RF FET LDMOS 190W H-37248-4 | Cree/Wolfspeed | H-37248-4 | 29W | 1.88GHz | 65V | 10µA | H-37248-4 | LDMOS | 15.5dB | 28V | 520mA | |
| CGHV1F025S | RF MOSFET HEMT 40V 12DFN | Cree/Wolfspeed | 12-DFN (4x3) | 29W | 0Hz ~ 15GHz | 100V | 2A | 12-VFDFN Exposed Pad | HEMT | 11.6dBm | 40V | 150mA | GaN |
- 10
- 15
- 50
- 100