-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTFA211801E-V5-R0 | RF MOSFET LDMOS 28V H-36260-2 | Cree/Wolfspeed | H-36260-2 | 180W | 2.11GHz ~ 2.17GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 15.5dB | 28V | 1.2A | |
| GTVA311801FA-V1-R2 | GAN HEMT 50V 180W 2.7-3.1GHZ | Cree/Wolfspeed | H-37265J-2 | 180W | 2.7GHz ~ 3.1GHz | 125V | H-37265J-2 | HEMT | 15dB | 50V | 20mA | GaN | |
| CGHV40180P | 180W, GAN HEMT, 50V, DC-4.0GHZ, | Cree/Wolfspeed | 440206 | 180W | 2GHz | 125V | 440206 | HEMT | 19.8dB | 50V | 1A | GaN | |
| CGHV40180F | RF MOSFET HEMT 50V 440223 | Cree/Wolfspeed | 440223 | 180W | 0Hz ~ 1GHz | 125V | 12.1A | 440223 | HEMT | 24dB | 50V | 1A | GaN |
| GTVA311801FA-V1-R0 | GAN HEMT 50V 180W 2.7-3.1GHZ | Cree/Wolfspeed | H-37265J-2 | 180W | 2.7GHz ~ 3.1GHz | 125V | H-37265J-2 | HEMT | 15dB | 50V | GaN |
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