- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Cree/Wolfspeed
- Series: Z-FET™
- Mounting Type: Chassis Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: Module, Screw Terminals
- Supplier Device Package: Module
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
- Power - Max: 1660W
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440196
- Supplier Device Package: 440196
- Frequency: 6GHz
- Voltage - Rated: 84V
- Power - Output: 30W
- Transistor Type: HEMT
- Gain: 13dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: Z-Rec®
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
- Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
- Power - Max: 167W
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 113.6W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +19V, -8V
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- Manufacturer: Cree/Wolfspeed
- Series: Automotive, AEC-Q101, E
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 54W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +18V, -8V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37275-6/2
- Supplier Device Package: H-37275-6/2
- Frequency: 1.99GHz
- Voltage - Rated: 65V
- Current - Test: 2.6A
- Power - Output: 80W
- Transistor Type: LDMOS
- Gain: 19dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440206
- Supplier Device Package: 440206
- Frequency: 4GHz
- Voltage - Rated: 84V
- Current - Test: 400mA
- Power - Output: 45W
- Transistor Type: HEMT
- Gain: 14dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: D2PAK-7
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.1V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 113W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +19V, -8V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: HB2SOF-6-1
- Supplier Device Package: PG-HB2SOF-6-1
- Frequency: 920MHz ~ 960MHz
- Voltage - Rated: 105V
- Current - Test: 600mA
- Power - Output: 630W
- Transistor Type: LDMOS (Dual), Common Source
- Gain: 19dB
- Voltage - Test: 50V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440095
- Supplier Device Package: 440095
- Frequency: 2.5GHz
- Voltage - Rated: 84V
- Current - Test: 1.2A
- Power - Output: 120W
- Transistor Type: HEMT
- Gain: 21.5dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36260-2
- Frequency: 960MHz
- Voltage - Rated: 65V
- Current - Test: 1.85A
- Power - Output: 220W
- Transistor Type: LDMOS
- Gain: 18.5dB
- Voltage - Test: 30V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.69GHz
- Voltage - Rated: 65V
- Current - Test: 210mA
- Power - Output: 18W
- Transistor Type: LDMOS
- Gain: 15.1dB
- Voltage - Test: 26V
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- 10
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- 100