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    • Voltage - Test
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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
  • C2M0160120D
    MOSFET N-CH 1200V 19A TO-247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
    • Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
    • Vgs(th) (Max) @ Id: 2.5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C3M0032120D
    1200V, 32 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
    • Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 3357pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 283W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C2M0045170D
    MOSFET NCH 1.7KV 72A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 18mA
    • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • C2M1000170J
    MOSFET N-CH 1700V 5.3A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C2M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-7 (Straight Leads)
    • Supplier Device Package: D2PAK (7-Lead)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
    • Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 78W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • CMF20120D
    MOSFET N-CH 1200V 42A TO-247-3
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 215W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -5V
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  • C3M0065090D
    MOSFET N-CH 900V 36A TO247-3
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 2.1V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • CCS050M12CM2
    MOSFET 6N-CH 1200V 87A MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™ Z-Rec™
    • Mounting Type: Chassis Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
    • Power - Max: 337W
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  • C3M0065090J
    MOSFET N-CH 900V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 2.1V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • C3M0016120D
    1200V, 16 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
    • Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 23mA
    • Gate Charge (Qg) (Max) @ Vgs: 207nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 556W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0120090J
    MOSFET N-CH 900V 22A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0065100J-TR
    1000V, 65 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: TO-263-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0075120J
    MOSFET N-CH 1200V 30A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • C3M0120090J-TR
    MOSFET N-CH 900V 22A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • CMF10120D
    MOSFET N-CH 1200V 24A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 135°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 134W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -5V
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  • C2M0025120D
    MOSFET N-CH 1200V 90A TO-247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 10mA
    • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 463W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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