• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
CMS02P02T6-HF MOSFET P-CH 20V SOT26 Comchip Technology SOT-26 1.25W (Tc) Surface Mount SOT-23-6 -55°C ~ 150°C (TJ) 2 P-Channel (Dual) 20V 2.5A (Tc) Standard 90mOhm @ 2.5A, 4.5V 1V @ 250µA 4.8nC @ 4.5V 350pF @ 15V
CMS02P06T6-HF MOSFET P-CH -60VDS 20VGS -2.4A S Comchip Technology SOT-26 Surface Mount SOT-23-6 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) P-Channel 1.1W (Ta) 60V 2.4A (Ta) 175mOhm @ 2A, 10V 4.5V, 10V 3V @ 250µA 4.6nC @ 4.5V 531pF @ 15V ±20V
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