Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Comchip Technology SOT-26
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
- Power - Max: 1.25W (Tc)
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- Manufacturer: Comchip Technology
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Rds On (Max) @ Id, Vgs: 175mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 15V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
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