-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMS80N06D-HF | MOSFET N-CH 60VDS 20VGS 80A TO-2 | Comchip Technology | D-PAK (TO-252) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 83W (Tc) | 60V | 14A (Ta), 80A (Tc) | 7mOhm @ 20A, 10V | 10V | 4V @ 250µA | 118nC @ 10V | 4871pF @ 30V | ±20V |
CMS16N06D-HF | MOSFET N-CH 60VDS 20VGS 64A TO-2 | Comchip Technology | D-PAK (TO-252) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2W (Ta), 27W (Tc) | 60V | 4.4A (Ta), 16A (Tc) | 50mOhm @ 8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 815pF @ 15V | ±20V |
CMS35P03D-HF | MOSFET P-CH -30VDS 20VGS -35A TO | Comchip Technology | D-PAK (TO-252) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta), 34W (Tc) | 30V | 8.5A (Ta), 34A (Tc) | 25mOhm @ 15A, 10V | 4.5V, 10V | 2.5V @ 250µA | 12.5nC @ 4.5V | 1345pF @ 15V | ±20V |
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