Found: 3
  • MOSFET N-CH 60VDS 20VGS 80A TO-2
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4871pF @ 30V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 60VDS 20VGS 64A TO-2
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 27W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET P-CH -30VDS 20VGS -35A TO
    Comchip Technology
    • Manufacturer: Comchip Technology
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-PAK (TO-252)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 34A (Tc)
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta), 34W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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